Comparison of the DC and microwave performance of AlGaN%252F…
Comparison of the DC and microwave performance of AlGaN%252FGaN HEMTs grown on SiC by MOCVD with Fe-doped or unintentionally doped GaN buffer layers
Article, Chapter
Authors:
V.
Publication:
Volume:53,
Page(s):2413
Published:
2006
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