Comparison of GaN and AlN nucleation layers for the oriented…
Comparison of GaN and AlN nucleation layers for the oriented growth of GaN on diamond substrates
Article, Chapter
Authors:
G.W.G. van Dreumel
Publication:
Volume:19,
Issue:5-6,
Page(s):437-440
Published:
2010
We were unable to find direct full text links for this item.