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Comparison of the DC and microwave performance of AlGaN%2FGa…
Comparison of the DC and microwave performance of AlGaN%2FGaN HEMTs grown on SiC by MOCVD with Fe-doped or unintentionally doped GaN buffer layers
Comparison of the DC and microwave performance of AlGaN%2FGaN HEMTs grown on SiC by MOCVD with Fe-doped or unintentionally doped GaN buffer layers
Article, Chapter
Authors: V. Desmaris
Publication: IEEE Transactions on Electron Devices, Volume:53, Issue:9, Page(s):-2417
Published: IEEE, 2006
ISSN: 0018-9383
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