Edit search
Strain relaxation in GaN grown on vicinal 4H-SiC %280001%29 …
Strain relaxation in GaN grown on vicinal 4H-SiC %280001%29 substrates
Strain relaxation in GaN grown on vicinal 4H-SiC %280001%29 substrates
Article, Chapter
Authors: J. Pernot
Publication: Journal of Applied Physics, Volume:101, Issue:3
Published: AIP Publishing, 2007
ISSN: 0021-8979
  Full text availability for this item
Browse related articles
  Print copies at your library
  Request a copy of this item
Cite this item