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Carrier gas and position effects on GaN growth in a horizont…
Carrier gas and position effects on GaN growth in a horizontal HVPE reactor%3A An experimental and numerical study
Carrier gas and position effects on GaN growth in a horizontal HVPE reactor%3A An experimental and numerical study
Article, Chapter
Authors: C.E.C. Dam
Publication: Journal of Crystal Growth, Volume:285, Issue:1-2, Page(s):31-40
Published: North-Holland, 2005
ISSN: 0022-0248
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View Full Text Source:Journal of Crystal Growth,Journal of Crystal Growth,Elsevier ScienceDirect Journals Opens in new Window
Journal:  Journal of Crystal Growth Source:Elsevier ScienceDirect Journals Opens in new Window
Collection:  Elsevier ScienceDirect Journals Opens in new Window
Coverage:
  • 1967-01~present; volume:1~present;issue:1~present
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