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Influence of growth parameters on the composition and impuri…
Influence of growth parameters on the composition and impurity levels of intrinsically carbon doped AlxGa1-xAs
Influence of growth parameters on the composition and impurity levels of intrinsically carbon doped AlxGa1-xAs
Article, Chapter
Authors: J. van Deelen
Publication: Journal of Crystal Growth, Volume:284, Issue:1-2, Page(s):28-38
Published: North-Holland
ISSN: 0022-0248
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View Full Text Source:Journal of Crystal Growth,Journal of Crystal Growth,Elsevier ScienceDirect Journals Opens in new Window
Journal:  Journal of Crystal Growth Source:Elsevier ScienceDirect Journals Opens in new Window
Collection:  Elsevier ScienceDirect Journals Opens in new Window
Coverage:
  • 1967-01~present; volume:1~present;issue:1~present
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