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Influence of the nucleation layer morphology and epilayer st…
Influence of the nucleation layer morphology and epilayer structure on the resistivity of GaN films grown on c-plane sapphire by MOCVD
Influence of the nucleation layer morphology and epilayer structure on the resistivity of GaN films grown on c-plane sapphire by MOCVD
Article, Chapter
Authors: Grzegorczyk
Publication: Journal of Crystal Growth, Volume:273, Issue:3-4, Page(s):424-430
Published: North-Holland
ISSN: 0022-0248
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View Full Text Source:Journal of Crystal Growth,Journal of Crystal Growth,Elsevier ScienceDirect Journals Opens in new Window
Journal:  Journal of Crystal Growth Source:Elsevier ScienceDirect Journals Opens in new Window
Collection:  Elsevier ScienceDirect Journals Opens in new Window
Coverage:
  • 1967-01~present; volume:1~present;issue:1~present
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