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Defect formation in GaN grown on vicinal 4H-SiC %280001%29 s…
Defect formation in GaN grown on vicinal 4H-SiC %280001%29 substrates
Defect formation in GaN grown on vicinal 4H-SiC %280001%29 substrates
Article, Chapter
Authors: M. Rudzinski
Publication: Volume:204, Issue:12, Page(s):-4240
Published: 2007
ISSN: 0031-8965
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