Defect formation in GaN grown on vicinal 4H-SiC %280001%29 s…
Defect formation in GaN grown on vicinal 4H-SiC %280001%29 substrates
Article, Chapter
Authors:
Rudzinski
Publication:
Volume:204,
Issue:12,
Page(s):4230-4240
ISSN:
0031-8965
We were unable to find direct full text links for this item.