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Characterization of wide-band-gap semiconductors %28GaN%2C S…
Characterization of wide-band-gap semiconductors %28GaN%2C SiC%29 by defect-selective etching and complementary methods
Characterization of wide-band-gap semiconductors %28GaN%2C SiC%29 by defect-selective etching and complementary methods
Article, Chapter
Authors: J.L. Weyher
Publication: Superlattices and Microstructures, Volume:40, Issue:4-6, Page(s):279-288
Published: Academic Press, 2006
ISSN: 0749-6036
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View Full Text Source:Superlattices and Microstructures,Superlattices and Microstructures,Elsevier ScienceDirect Journals Opens in new Window
Journal:  Superlattices and Microstructures Source:Elsevier ScienceDirect Journals Opens in new Window
Collection:  Elsevier ScienceDirect Journals Opens in new Window
Coverage:
  • 1985~present
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