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Comparison of GaN and AlN nucleation layers for the oriented…
Comparison of GaN and AlN nucleation layers for the oriented growth of GaN on diamond substrates
Comparison of GaN and AlN nucleation layers for the oriented growth of GaN on diamond substrates
Article, Chapter
Authors: G.W.G. van Dreumel
Publication: Diamond and Related Materials, Volume:19, Issue:5-6, Page(s):-440
Published: Elsevier, 2010
ISSN: 0925-9635
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