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Statistical photoluminescence of dislocations and associated…
Statistical photoluminescence of dislocations and associated defects in heteroepitaxial GaN grown by metal organic chemical vapor deposition
Statistical photoluminescence of dislocations and associated defects in heteroepitaxial GaN grown by metal organic chemical vapor deposition
Article, Chapter
Authors: L.J. Macht
Publication: Physical Review B - Condensed Matter and Materials Physics, Volume:71, Issue:7, Page(s):073309-1
Published: American Physical Society, 2005
ISSN: 1098-0121
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View Full Text Source:Physical Review B - Condensed Matter and Materials Physics,Physical Review B - Condensed Matter and Materials Physics,APS Journals Opens in new Window
Journal:  Physical Review B - Condensed Matter and Materials Physics Source:APS Journals Opens in new Window
Collection:  APS Journals Opens in new Window
Coverage:
  • 1998-01~2015-12; volume:57;issue:1~volume:92;issue:24
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