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The influence of InxGa1 xAs and GaAs1 yPy layers surrounding…
The influence of InxGa1 xAs and GaAs1 yPy layers surrounding the AlAs release layer in the epitaxial lift-off
The influence of InxGa1 xAs and GaAs1 yPy layers surrounding the AlAs release layer in the epitaxial lift-off
Article, Chapter
Authors: Niftrik
Publication: Crystal Growth and Design, Volume:7, Issue:12, Page(s):2472-2480
Published: American Chemical Society
ISSN: 1528-7483
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View Full Text Source:Crystal Growth and Design,Crystal Growth and Design,American Chemical Society Journals (Front Files) Opens in new Window
Journal:  Crystal Growth and Design Source:American Chemical Society Journals (Front Files) Opens in new Window
Collection:  American Chemical Society Journals (Front Files) Opens in new Window
Coverage:
  • 2001~present; volume:1~present;issue:1~present
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