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Influence of the misorientation of 4H-SiC substrates on the …
Influence of the misorientation of 4H-SiC substrates on the morphology and crack formation in hetero epitaxial MOCVD grown GaN epilayers by MOCVD
Influence of the misorientation of 4H-SiC substrates on the morphology and crack formation in hetero epitaxial MOCVD grown GaN epilayers by MOCVD
Article, Chapter
Authors: M. Rudzinski
Publication: Physica Status Solidi, Volume:2, Issue:7, Page(s):2141-2144
Published: 2005
ISSN: 1610-1634
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