Influence of the misorientation of 4H-SiC substrates on the …
Influence of the misorientation of 4H-SiC substrates on the morphology and crack formation in hetero epitaxial MOCVD grown GaN epilayers by MOCVD
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Wiley UKB (inactive subscribed)
Coverage:
- 2003~2005; issue:1~volume:2;issue:12~2005
Coverage:
- 2003-01-01~2005-12-01; volume:0;issue:1~volume:2;issue:12