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Application of orthodox defect-selective etching for studyin…

Application of orthodox defect-selective etching for studying GaN single crystals%2525252C epitaxial layers and device structures

Article, Chapter

Authors: G. Kamler

Publication: European Physical Journal - Applied Physics, The, Volume:27, Issue:1-3, Page(s):247

Published: 2004

ISSN: 1286-0042

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View Full Text Source:European Physical Journal - Applied Physics, The,European Physical Journal - Applied Physics, The,Cambridge University Press (inactive subscribed) Opens in new Window

Journal: European Physical Journal - Applied Physics, The Source:Cambridge University Press (inactive subscribed) Opens in new Window

Collection: Cambridge University Press (inactive subscribed)

Coverage:

2011~2014

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