Defect formation in GaN grown on vicinal 4H-SiC %25252528000…
Defect formation in GaN grown on vicinal 4H-SiC %252525280001%25252529 substrates
Article, Chapter
Authors:
M. Rudzinski
Publication:
Volume:204,
Issue:12,
Page(s):-4240
Published:
2007
ISSN:
0031-8965
We were unable to find direct full text links for this item.