Defect formation in GaN grown on vicinal 4H-SiC %25252528000…
Defect formation in GaN grown on vicinal 4H-SiC %252525280001%25252529 substrates
Article, Chapter
Full text availability for this item
Collection:
Wiley Online Library Database Model 2021
Coverage:
- 1997~2004
Collection:
Wiley Online Library: Complete Journals
Coverage:
- 1970-01-16~2004-12-01
Collection:
Wiley Online Library All Backfiles
Coverage:
- 1970~1996