Defect formation in GaN grown on vicinal 4H-SiC %25280001%25…
Defect formation in GaN grown on vicinal 4H-SiC %25280001%2529 substrates
Article, Chapter
Authors:
M. Rudzinski
Publication:
Volume:204,
Issue:12,
Page(s):-4240
Published:
2007
ISSN:
0031-8965
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